features low cost diffused junction low leakage and s im ilar s olvents mechanical data ca s e : je d e c do-41 , m olded pl a s t ic method 208 mounting: any ratings at 25 ambient temperature unless otherwise specified. s ingle pha s e , half w a v e , 50 h z , r e s i s t i v e or indu c t i v e load. f or c apa c i t i v e load , de r a t e by 20 % . maximum peak repetitive reverse voltage v rrm 400 600 max imum rms v o lt age v r m s 280 420 maximum dc blocking voltage v dc 400 600 maximum average forw ard rectified current v 9.5mm lead length, @t a =75 i f (av) 0 . 5 a peak f orw ard surge current 10ms single half-sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ i f =i f ( av ) v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j 15 pf typical thermal resistance (note3) r j c /w operating junction temperature range t j storage temperature range t stg 2. measured at 1.0mh z and applied rev erse v oltage of 4.0v dc. units 22 100 500 50 1.2 ag01y - - - AG01A - 55 ----- + 150 h i gh e f f i c i e n cy r e c t i f i er s v o l t a g e r a n g e: 70 --- 6 0 0 v current: 0.5---1.0 a m a x i m um r a t i n g s a nd e l e c t r i cal chara c t e r i s t i cs do-41 low forward voltage drop high crrent capability 25 note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. 200 1.0 0.7 1.8 15 v a 100 i r - 55 ----- + 150 100 70 140 200 20 3. t her m al r e s i st an c e ju n ct ion t o case . easily cleaned with f reon, alcohol, lsopropand polarity: color band denotes cathode w ei g h t : 0.012 ounces,0.34 grams i fsm x a terminals: axial leads,solderable per mil-std-202, ag01y ag01z ag01 AG01A dimensions in millimeters www.diode.kr diode semiconductor korea
amperes amperes ambient temperature, average forward rectified current instantaneous forward current f i g . 5 -- t y p i cal j unc t i o n ca p ac i t ance peak forward surge current amperes number of cycles at 60hz junction capacitance,pf reverse voltage,volts ga g01y - - - g AG01A fi g. 1 -- test ci rcui t di agram and reverse recovery ti me characteri sti c instantaneous forward voltage, volts fi g. 4 -- peak forward surge current z set time base for 10/20 ns/cm notes:1.rise time = 7ns max.input impedance =1m . 22pf. jjjj 2.rise time =10ns max.source impedance=50 . fi g. 2 -- typi cal forward characteri sti c fi g. 3 -- forward derati ng curve pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note1) (+) 25vdc (approx) (-) t rr - 1 . 0 a - 0 . 2 5 a 0 + 0 . 5 a 1cm 0 25 5 0 7 5 100 125 150 0 0 . 3 0 . 6 0 . 9 1 . 2 1 . 5 ag01y ag01z,ag01 AG01A single phase half wave 60hz resistive or inductive load 0.4 0.8 0.001 0.01 0.1 1 10 1.2 2.0 2.4 2.8 20 1.6 t j =25 pulse width=300ns a g 0 1 y a g 0 1 z -a g 0 1 a g 0 1 a 1 5 10 50 0 5 10 15 20 25 30 ag01y ag01z--AG01A t j =25 8.3ms single half sine-wave 0.1 1 2 t j =25 0.20.412 100 410 40 20 10 4 20 40 60 200 100 ag01y-ag01 AG01A diode semiconductor korea www.diode.kr
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